Surface photovoltage spectroscopy on Cu(In,Ga)(S,Se)2/ ZnS-nanodot/In2S3 systems
Identifieur interne : 000031 ( Main/Repository ); précédent : 000030; suivant : 000032Surface photovoltage spectroscopy on Cu(In,Ga)(S,Se)2/ ZnS-nanodot/In2S3 systems
Auteurs : RBID : Pascal:14-0026976Descripteurs français
- Pascal (Inist)
- Tension photoélectrique surface, Nanopoint, Système combiné, Tension circuit ouvert, Cellule solaire, Défaut surface, Etat défaut, Bande interdite, Formation défaut, Sulfure de gallium, Sulfure d'indium, Sulfure de cuivre, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Sulfure de zinc, Indium, Dérivé de l'acétylacétone, Zinc, Cuivre, Oxyde de zinc, Chalcopyrite, Cu(In,Ga)(S,Se)2, ZnS, In2S3, ZnO.
- Wicri :
English descriptors
- KwdEn :
- Acetylacetone derivatives, Chalcopyrite, Combined system, Copper, Copper selenides, Copper sulfide, Defect formation, Defect states, Energy gap, Gallium selenides, Gallium sulfide, Indium, Indium selenides, Indium sulfide, Nanodot, Open circuit voltage, Solar cell, Surface defect, Surface photovoltage, Zinc, Zinc oxide, Zinc sulfide.
Abstract
Single layers and combined layer systems with Cu(In,Ga)(S,Se)2, ZnS-nanodot (nd) and In2S3 layers were investigated by surface photovoltage spectroscopy in the Kelvin-probe arrangement and compared with the open-circuit voltage (VOC) of solar cells. The In2S3 and ZnS-nd layers were prepared by the spray ion layer gas reaction (ILGAR) technique from Indium chloride (InCl3), Indium acetylacetonate (In(acac)3) and Zinc acetylacetonate, respectively. The surface photovoltage signals of Cu(In,Ga)(S,Se)2 were larger for the Cu(In,Ga)(S,Se)/ZnS-nd/In2S3 than for the Cu(In,Ga)(S,Se)2/In2S3 layer system showing that a ZnS-nd layer additionally passivated the Cu(In,Ga)(S,Se)2 surface. ILGAR In2S3 deposition from InCl3 precursor solution led to a modification of surface defects of ZnS-nd and to generation of defect states below the band gap of Cu(In,Ga)(S,Se)2, which has not been observed for deposition from Indium acetylacetonate precursor. Defect generation during ILGAR In2S3 deposition with InCl3 precursor resulted in a lower VOC of Cu(In,Ga)(S,Se)2/ZnS-nd/ In2S3/ZnO: Al solar cells.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Surface photovoltage spectroscopy on Cu(In,Ga)(S,Se)<sub>2</sub>/ ZnS-nanodot/In<sub>2</sub>S<sub>3</sub> systems</title><author><name>YANPENG FU</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz Center Berlin for Materials and Energy, Hahn-Meitner-Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Rada, Tomas" uniqKey="Rada T">Tomàs Rada</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz Center Berlin for Materials and Energy, Hahn-Meitner-Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Departamento de Física, Universidad del Norte, km 5 Via Pto Colombia</s1><s2>Barranquilla</s2><s3>COL</s3><sZ>2 aut.</sZ></inist:fA14><country>Colombie</country><wicri:noRegion>Barranquilla</wicri:noRegion></affiliation></author><author><name sortKey="Fischer, Christian Herbert" uniqKey="Fischer C">Christian-Herbert Fischer</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz Center Berlin for Materials and Energy, Hahn-Meitner-Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Free University Berlin</s1><s2>14195 Berlin</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Lux Steiner, Martha Ch" uniqKey="Lux Steiner M">Martha Ch. Lux-Steiner</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz Center Berlin for Materials and Energy, Hahn-Meitner-Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Free University Berlin</s1><s2>14195 Berlin</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Dittrich, Thomas" uniqKey="Dittrich T">Thomas Dittrich</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz Center Berlin for Materials and Energy, Hahn-Meitner-Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0026976</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0026976 INIST</idno><idno type="RBID">Pascal:14-0026976</idno><idno type="wicri:Area/Main/Corpus">000268</idno><idno type="wicri:Area/Main/Repository">000031</idno></publicationStmt><seriesStmt><idno type="ISSN">1062-7995</idno><title level="j" type="abbreviated">Prog. photovolt. : (Print)</title><title level="j" type="main">Progress in photovoltaics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Acetylacetone derivatives</term><term>Chalcopyrite</term><term>Combined system</term><term>Copper</term><term>Copper selenides</term><term>Copper sulfide</term><term>Defect formation</term><term>Defect states</term><term>Energy gap</term><term>Gallium selenides</term><term>Gallium sulfide</term><term>Indium</term><term>Indium selenides</term><term>Indium sulfide</term><term>Nanodot</term><term>Open circuit voltage</term><term>Solar cell</term><term>Surface defect</term><term>Surface photovoltage</term><term>Zinc</term><term>Zinc oxide</term><term>Zinc sulfide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Tension photoélectrique surface</term><term>Nanopoint</term><term>Système combiné</term><term>Tension circuit ouvert</term><term>Cellule solaire</term><term>Défaut surface</term><term>Etat défaut</term><term>Bande interdite</term><term>Formation défaut</term><term>Sulfure de gallium</term><term>Sulfure d'indium</term><term>Sulfure de cuivre</term><term>Séléniure de cuivre</term><term>Séléniure de gallium</term><term>Séléniure d'indium</term><term>Sulfure de zinc</term><term>Indium</term><term>Dérivé de l'acétylacétone</term><term>Zinc</term><term>Cuivre</term><term>Oxyde de zinc</term><term>Chalcopyrite</term><term>Cu(In,Ga)(S,Se)2</term><term>ZnS</term><term>In2S3</term><term>ZnO</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Zinc</term><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Single layers and combined layer systems with Cu(In,Ga)(S,Se)<sub>2</sub>, ZnS-nanodot (nd) and In<sub>2</sub>S<sub>3</sub> layers were investigated by surface photovoltage spectroscopy in the Kelvin-probe arrangement and compared with the open-circuit voltage (V<sub>OC</sub>) of solar cells. The In<sub>2</sub>S<sub>3</sub> and ZnS-nd layers were prepared by the spray ion layer gas reaction (ILGAR) technique from Indium chloride (InCl<sub>3</sub>), Indium acetylacetonate (In(acac)<sub>3</sub>) and Zinc acetylacetonate, respectively. The surface photovoltage signals of Cu(In,Ga)(S,Se)<sub>2</sub> were larger for the Cu(In,Ga)(S,Se)/ZnS-nd/In<sub>2</sub>S<sub>3</sub> than for the Cu(In,Ga)(S,Se)<sub>2</sub>/In<sub>2</sub>S<sub>3</sub> layer system showing that a ZnS-nd layer additionally passivated the Cu(In,Ga)(S,Se)<sub>2</sub> surface. ILGAR In<sub>2</sub>S<sub>3</sub> deposition from InCl<sub>3</sub> precursor solution led to a modification of surface defects of ZnS-nd and to generation of defect states below the band gap of Cu(In,Ga)(S,Se)<sub>2</sub>, which has not been observed for deposition from Indium acetylacetonate precursor. Defect generation during ILGAR In<sub>2</sub>S<sub>3</sub> deposition with InCl<sub>3</sub> precursor resulted in a lower V<sub>OC</sub> of Cu(In,Ga)(S,Se)<sub>2</sub>/ZnS-nd/ In<sub>2</sub>S<sub>3</sub>/ZnO: Al solar cells.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1062-7995</s0></fA01><fA03 i2="1"><s0>Prog. photovolt. : (Print)</s0></fA03><fA05><s2>22</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Surface photovoltage spectroscopy on Cu(In,Ga)(S,Se)<sub>2</sub>/ ZnS-nanodot/In<sub>2</sub>S<sub>3</sub> systems</s1></fA08><fA11 i1="01" i2="1"><s1>YANPENG FU</s1></fA11><fA11 i1="02" i2="1"><s1>RADA (Tomàs)</s1></fA11><fA11 i1="03" i2="1"><s1>FISCHER (Christian-Herbert)</s1></fA11><fA11 i1="04" i2="1"><s1>LUX-STEINER (Martha Ch.)</s1></fA11><fA11 i1="05" i2="1"><s1>DITTRICH (Thomas)</s1></fA11><fA14 i1="01"><s1>Helmholtz Center Berlin for Materials and Energy, Hahn-Meitner-Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Departamento de Física, Universidad del Norte, km 5 Via Pto Colombia</s1><s2>Barranquilla</s2><s3>COL</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Free University Berlin</s1><s2>14195 Berlin</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>44-50</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>26755</s2><s5>354000500724620060</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>11 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0026976</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Progress in photovoltaics : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Single layers and combined layer systems with Cu(In,Ga)(S,Se)<sub>2</sub>, ZnS-nanodot (nd) and In<sub>2</sub>S<sub>3</sub> layers were investigated by surface photovoltage spectroscopy in the Kelvin-probe arrangement and compared with the open-circuit voltage (V<sub>OC</sub>) of solar cells. The In<sub>2</sub>S<sub>3</sub> and ZnS-nd layers were prepared by the spray ion layer gas reaction (ILGAR) technique from Indium chloride (InCl<sub>3</sub>), Indium acetylacetonate (In(acac)<sub>3</sub>) and Zinc acetylacetonate, respectively. The surface photovoltage signals of Cu(In,Ga)(S,Se)<sub>2</sub> were larger for the Cu(In,Ga)(S,Se)/ZnS-nd/In<sub>2</sub>S<sub>3</sub> than for the Cu(In,Ga)(S,Se)<sub>2</sub>/In<sub>2</sub>S<sub>3</sub> layer system showing that a ZnS-nd layer additionally passivated the Cu(In,Ga)(S,Se)<sub>2</sub> surface. ILGAR In<sub>2</sub>S<sub>3</sub> deposition from InCl<sub>3</sub> precursor solution led to a modification of surface defects of ZnS-nd and to generation of defect states below the band gap of Cu(In,Ga)(S,Se)<sub>2</sub>, which has not been observed for deposition from Indium acetylacetonate precursor. Defect generation during ILGAR In<sub>2</sub>S<sub>3</sub> deposition with InCl<sub>3</sub> precursor resulted in a lower V<sub>OC</sub> of Cu(In,Ga)(S,Se)<sub>2</sub>/ZnS-nd/ In<sub>2</sub>S<sub>3</sub>/ZnO: Al solar cells.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Tension photoélectrique surface</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Surface photovoltage</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Nanopoint</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Nanodot</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Nanopunto</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Système combiné</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Combined system</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Sistema combinado</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Tension circuit ouvert</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Open circuit voltage</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Solar cell</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Célula solar</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Défaut surface</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Surface defect</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Defecto superficie</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Etat défaut</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Defect states</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Bande interdite</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Energy gap</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Banda prohibida</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Formation défaut</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Defect formation</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Formación defecto</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Sulfure de gallium</s0><s5>22</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Gallium sulfide</s0><s5>22</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Galio sulfuro</s0><s5>22</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Sulfure d'indium</s0><s5>23</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Indium sulfide</s0><s5>23</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Indio sulfuro</s0><s5>23</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Sulfure de cuivre</s0><s5>24</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Copper sulfide</s0><s5>24</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Cobre sulfuro</s0><s5>24</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Séléniure de cuivre</s0><s2>NK</s2><s5>25</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>25</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Séléniure de gallium</s0><s2>NK</s2><s5>26</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Gallium selenides</s0><s2>NK</s2><s5>26</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Séléniure d'indium</s0><s2>NK</s2><s5>27</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>27</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Sulfure de zinc</s0><s5>28</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Zinc sulfide</s0><s5>28</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Zinc sulfuro</s0><s5>28</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Indium</s0><s2>NC</s2><s5>29</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Indium</s0><s2>NC</s2><s5>29</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Indio</s0><s2>NC</s2><s5>29</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Dérivé de l'acétylacétone</s0><s5>30</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Acetylacetone derivatives</s0><s5>30</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Acetilacetona derivado</s0><s5>30</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Zinc</s0><s2>NC</s2><s5>31</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Zinc</s0><s2>NC</s2><s5>31</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Zinc</s0><s2>NC</s2><s5>31</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>32</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>32</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Cobre</s0><s2>NC</s2><s5>32</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>33</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>33</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>33</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Chalcopyrite</s0><s5>34</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Chalcopyrite</s0><s5>34</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Calcopirita</s0><s5>34</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Cu(In,Ga)(S,Se)2</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>ZnS</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>In2S3</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>85</s5></fC03><fN21><s1>027</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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